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Up to 5 A Single Channel IGBT/MOSFET Gate Driver Providing Reinforced Isolation up to 1200 V IGBT and MOSFET

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Product Parts
Data Sheet
IGBT Voltage Class
Gate Peak Current (Max)
Max Switching Frequency
Supported Module Type
Logic Input Voltage
Protection Features
Interface Type
Supported Topologies
Supply Voltage (Typ)
Isolation Type
Isolation Technology
Time - Output Fall
Time - Output Rise
Driving Mode
Paralleling Support?
Data Sheet View PDF
IGBT Voltage Class 1200 V
Gate Peak Current (Max) +5 A
Max Switching Frequency 75.0 kHz
Supported Module Type IGBT, N-Channel MOSFET
Logic Input Voltage 5
Protection Features Basic Active Clamping, Adv Soft Shutdown, Dynamic Adv Active Clamping, Short Circuit, UVLO(Sec-side), UVLO(Pri-side)
Technology SCALE-iDriver
Interface Type Electrical
Supported Topologies 2-level Voltage Source, 3-level NP-Clamped - Type 1, 3-level NP-Clamped - Type 2, Multi-Level NP-Clamped
Supply Voltage (Typ) 5 V
Isolation Type Reinforced
Isolation Technology Fluxlink
Time - Output Fall 14 ns
Time - Output Rise 29 ns
Driving Mode Direct-Independent
Main/Peripheral N/A
Paralleling Support? No

Product Details

The SID1102K is a single-channel IGBT and MOSFET gate driver in an eSOP wide body package. Reinforced galvanic isolation is provided by Power Integrations’ innovative solid insulator FluxLink™ technology. Up to 5 A peak output drive current enables the product to drive devices with nominal currents of up to 300 A. Booster stages are available for gate driver requirements that exceed 5 A, AUXGL and AUXGH output pins drive external N-Channel MOSFETs up to 60 A.

Controller (PWM) signals are compatible with 5 V CMOS logic, which may also be adjusted to 15 V levels by using external resistor divider. The secondary side voltage management provides bipolar gate driver voltage from +15 to -10 V while only a +25 V unipolar voltage is required. The +15 V gate drive voltage is regulated by the chip internal Vee voltage regulator. An undervoltage log out turns off the gate signal and keeps the IGBT or MOSFET in a safe operation.

  • IGBT gate driver with wide flexible use to drive IGBT modules up to 1200 V and IGBT current 50 A up to 3600 A.
  • Single channel providing up to 5 A peak gate drive current without boosters
  • Auxiliary outputs for external high and lowside n-channel booster stage for increased peak drive current up to 60A
  • Undervoltage log out
  • Integrated FluxLink technology providing safe isolation between primary-side and secondary-side
  • Rail-to-rail stabilized output voltage
  • Unipolar supply voltage for secondary-side
  • Suitable for 600 V / 650 V / 1200 V IGBT and MOSFET switches
  • Up to 75 kHz switching frequency
  • Propagation delay jitter ±5 ns
  • -40 °C to 125 °C operating ambient temperature
  • High common-mode transient immunity
  • eSOP package with 9.5 mm creepage and clearance

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