SID1102K
Up to 5 A Single Channel IGBT/MOSFET Gate Driver Providing Reinforced Isolation up to 1200 V IGBT and MOSFET
제품 상세 정보
The SID1102K is a single-channel IGBT and MOSFET gate driver in an eSOP wide body package. Reinforced galvanic isolation is provided by Power Integrations’ innovative solid insulator FluxLink™ technology. Up to 5 A peak output drive current enables the product to drive devices with nominal currents of up to 300 A. Booster stages are available for gate driver requirements that exceed 5 A, AUXGL and AUXGH output pins drive external N-Channel MOSFETs up to 60 A.
Controller (PWM) signals are compatible with 5 V CMOS logic, which may also be adjusted to 15 V levels by using external resistor divider. The secondary side voltage management provides bipolar gate driver voltage from +15 to -10 V while only a +25 V unipolar voltage is required. The +15 V gate drive voltage is regulated by the chip internal Vee voltage regulator. An undervoltage log out turns off the gate signal and keeps the IGBT or MOSFET in a safe operation.
명세서
| 최대 스위칭 주파수 | 75.00 kHz |
| IGBT 전압 등급 | 1200 V |
| 기술 | SCALE-iDriver |
| 인터페이스 유형 | Electrical |
| 채널 수 | 1 |
| 게이트 피크 전류 (최대) | +5 A |
| 상품 유형 | IC |
| Product Sub-Type | Driver IC |
| 지원되는 모듈 유형 |
IGBT
N-Channel MOSFET
|
| 메인 / 주변 | N/A |
| 지원되는 토폴로지 |
2-level Voltage Source
3-level NP-Clamped - Type 1
3-level NP-Clamped - Type 2
Multi-Level NP-Clamped
|
| 보호 기능 |
Basic Active Clamping
Adv Soft Shutdown
Dynamic Adv Active Clamping
Short Circuit
UVLO(Sec-side)
UVLO(Pri-side)
|
| 드라이브 모드 | Direct-Independent |
| 논리 입력 전압 | 5 |
| 공급 전압 (일반) | 5.00 V |
| 시간 - 출력 상승 | 29.00 ns |
| 시간 - 출력 하락 | 14.00 ns |
| 격리 기술 | Fluxlink |
| 격리 유형 | Reinforced |
| Gate Boosting? | Yes |
| 게이트 피크 전류 (최소) | -5 |
