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Up to 8 A Single Channel SiC MOSFET Gate Driver Providing Advanced Active Clamping and Reinforced Isolation Up to 1200 V

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Product Parts
Data Sheet
IGBT Voltage Class
Max Switching Frequency
Gate Peak Current (Max)
Supported Module Type
Logic Input Voltage
Protection Features
Supported Topologies
Interface Type
Supply Voltage (Typ)
Isolation Type
Isolation Technology
Time - Output Fall
Time - Output Rise
Driving Mode
Paralleling Support?
Data Sheet View PDF
IGBT Voltage Class 1200 V
Max Switching Frequency 150.0 kHz
Gate Peak Current (Max) +8 A
Main/Peripheral N/A
Supported Module Type Silicon Carbide
Logic Input Voltage 5
Protection Features Adv Active Clamping, Dynamic Adv Active Clamping, Short Circuit, UVLO(Sec-side), UVLO(Pri-side)
Technology SCALE-iDriver
Supported Topologies 2-level Voltage Source, 3-level NP-Clamped - Type 1, 3-level NP-Clamped - Type 2, Multi-Level NP-Clamped
Interface Type Electrical
Supply Voltage (Typ) 5 V
Isolation Type Reinforced
Isolation Technology Fluxlink
Time - Output Fall 18 ns
Time - Output Rise 22 ns
Driving Mode Direct-Independent
Paralleling Support? No

Product Details

The SIC1182K is a single channel gate driver in an eSOP-R16B package for SiC MOSFETs. Reinforced galvanic isolation is provided by Power Integrations’ revolutionary solid insulator FluxLink technology. Up to ±8 A peak output drive current enables the product to drive devices with nominal currents of up to 600 A (typical).

Additional features such as undervoltage lock-out (UVLO) for primary-side and secondary-side and rail-to-rail output with temperature- and process-compensated output impedance guarantee safe operation even in harsh conditions.

Furthermore, this gate driver IC has a new feature, advanced active clamping (at turn-off phase), combining short-circuit protection (at and during turn-on phase) as well as overvoltage limitation, through a single sensing pin. If the driven semiconductor provides a current-sense terminal, adjustable over-current detection is supported.

Highly Integrated, Compact Footprint

  • Suitable for 600 V / 650 V / 1200 V SiC MOSFET switches
  • ±8 A peak gate output current
  • Integrated FluxLink™ technology providing reinforced isolation
  • Advanced Active Clamping
  • UVLO primary and secondary side
  • Over-current fault turn-off
  • Short-circuit current fault turn-off
  • Rail-to-rail stabilized output voltage
  • Unipolar supply voltage for secondary-side
  • Up to 150 kHz switching frequency
  • Propagation delay jitter ±5 ns
  • -40 °C to +125 °C operating ambient temperature
  • High common-mode transient immunity
  • eSOP package with 9.5 mm creepage and clearance

Protection / Safety Features

  • Undervoltage lock-out protection for primary and secondary-side including fault feedback
  • Over-current detection for SiC MOSFETs with current-sense terminal
  • Ultrafast short-circuit monitoring
  • Turn off overvoltage limitation (Advanced Active Clamping)

Full Safety and Regulatory Compliance

  • 100% production partial discharge test
  • 100% production HIPOT compliance testing
  • Reinforced insulation, VDE V 0884-10 certified
  • UL 1577 recognition pending

Green Package

  • Halogen free and RoHS compliant


  • General purpose and servo drives
  • UPS, PV, welding inverters and power supplies
  • Other industrial applications

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