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Single-channel SCALE-2 driver core with Planar transformers, 60 A gate current for driving large IGBT modules in parallel, 20 W output power for high-frequency applications up to 500 kHz

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Product Parts
Data Sheet
IGBT Voltage Class
Number of Channels
Conformal Coated?
Supported Module Type
Protection Features
Interface Type
Supported Topologies
Gate Turn-on Voltage
Gate Turn-off Voltage
Power - Output/Channel (Max)
Gate Peak Current (Max)
Isolation Type
Isolation Technology
Max Switching Frequency
Time - Output Fall
Time - Output Rise
Driving Mode
Paralleling Support?
Data Sheet View PDF
IGBT Voltage Class 1700 V
Number of Channels 1
Conformal Coated? No
Supported Module Type IGBT, N-Channel MOSFET
Protection Features Adv Active Clamping, Short Circuit, UVLO(Sec-side), UVLO(Pri-side)
Technology SCALE-2
Interface Type Electrical
Supported Topologies 2-level Voltage Source, 3-level NP-Clamped - Type 1, 3-level NP-Clamped - Type 2, Multi-Level NP-Clamped
Gate Turn-on Voltage +15.0 V
Gate Turn-off Voltage --10.5 V
Power - Output/Channel (Max) 23.0 W
Gate Peak Current (Max) +60 A
Isolation Type Reinforced
Isolation Technology Galvanic
Max Switching Frequency 500.0 kHz
Time - Output Fall 15 ns
Time - Output Rise 10 ns
Driving Mode Direct-Independent
Main/Peripheral N/A
Paralleling Support? No

Product Details

The 1SC2060P is the latest, highest power member of CONCEPT’s driver core family. The high-performance SCALE-2 driver core targets high-power single-channel IGBT and MOSFET applications such as induction heating, resonant and high-frequency power conversion as well as parallel gate driving of large modules. 

The use of planar transformer technology enables significant improvements in power density, noise immunity, and reliability. 

Equipped with the latest SCALE-2 chipset, the gate driver supports switching at up to 500 kHz with best-in-class efficiency. The 1SC2060P effectively comprises a complete single-channel IGBT driver core, fully-equipped with an isolated DC/DC converter, short-circuit protection, Advanced Active Clamping, and supply-voltage monitoring. 

With its extremely compact outline of 44 mm x 74 mm and a total height of just 7 mm, the 1SC2060P delivers high power density in an attractive form factor. The highly-integrated SCALE-2 chipset reduces component count by 80% compared to conventional solutions, thus significantly increasing reliability and reducing costs. 

An embedded-paralleling capability allows easy inverter design covering higher power ratings. 


Merging 60 A gate current with 20 W output power makes the 1SC2060P the ultimate high-power driver platform for both single and parallel gate driving of large IGBT modules. In the dedicated IGBT mode, the driver provides a gate voltage swing of +15 V / –10 V. The turn-on voltage is regulated to maintain a stable 15 V regardless of the output power level. 

Superior EMC performance allows reliable operation even in industry’s harshest environments. The 1SC2060P is suited for high-power IGBTs with blocking voltages up to 1700 V. 


With its high output power, very short delay, and extremely small jitter, the 1SC2060P driver core has been specifically designed for high-power and ultra-fast switching, fully exploiting the capabilities of state-of-the-art MOS power devices. 

Benefits in Fast-Switching Applications

Fast switching not only requires high drive power and maximum frequency but also relies on tight control over crucial parameters such as the driver’s delay time and the associated jitter. A fast driver with a short delay introduces significantly less phase lag into the power system’s control loop. Less phase lag is of great importance for maintaining the stability of the control loop, thus allowing the benefits of fast switching to be fully exploited.

The 1SC2060P shares SCALE-2 high performance figures for fast signal transmission featuring a delay time of less than 80ns and extremely low jitter of less than ±1ns. It is this unique combination of high output power and stable precision that makes the 1SC2060P a highly-suitable choice for optimized systems, where tight control over timing margins is mandatory.

Use of planar transformer technology leads to low transformer stray inductance, ultra-flat design and extrem power density.

  • Ultra-flat solution
  • Planar transformer isolation
  • Blocking voltages up to 1700V
  • Switching frequency up to 500kHz
  • Very short delay time of <80ns
  • Extremely small jitter of <±1ns
  • High gate current ±60A
  • Schmitt-trigger inputs
  • Interface for 3.3V...15V logic level
  • Compatible to all logic families
  • Embedded paralleling capability
  • 2-level and multilevel topologies
  • IGBT short-circuit protection
  • Advanced Active Clamping
  • Isolated DC/DC converter
  • 20W output power
  • Supply under-voltage lockout
  • Safe isolation to EN50178
  • UL compliant
  • Superior EMC
  • Reliable, long service life