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2SC0115T

Smallest IGBT gate-driver for 90 kW-500 kW inverters, SCALE-2+ Technology, galvanic solution for 1200 V IGBT drivers, advanced active clamping or SSD

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Product Parts
產品
產品規格型錄
IGBT電壓等級
通道數
保形塗層?
驅動模式
閘極峰值電流 (最大)
閘極關斷電壓
隔離技術
接口類型
保護功能
隔離類型
邏輯輸入電壓
主/外圍
最大開關頻率
Options Info
閘極導通電壓
支持的模組種類
支持的拓撲
輸出功率/通道 - 最大
並行支持?
電源電壓 (典型)
時間 - 輸出下降
時間 - 輸出上升
技術
IGBT Voltage Class 1200 V
Number of Channels 2
Conformal Coated? No
Driving Mode Direct-Independent
Gate Peak Current (Max) +15 A
Gate Turn-off Voltage --8.5 V
Isolation Technology Galvanic
Interface Type Electrical
Protection Features Adv Active Clamping, Short Circuit, UVLO(Sec-side), UVLO(Pri-side)
Isolation Type Reinforced
Logic Input Voltage 5
Main/Peripheral N/A
Max Switching Frequency 50.0 kHz
Options Info Conformal Coated Version  2SC0115T2A0C-12
Gate Turn-on Voltage +15.0 V
Supported Module Type IGBT, N-Channel MOSFET
Supported Topologies 2-level Voltage Source, 3-level NP-Clamped - Type 1, 3-level NP-Clamped - Type 2, Multi-Level NP-Clamped
Power - Output/Channel (Max) 1.4 W
Supply Voltage (Typ) 15 V
Time - Output Fall 12 ns
Time - Output Rise 6 ns
Technology SCALE-2+
IGBT Voltage Class 1200 V
Number of Channels 2
Conformal Coated? Yes
Driving Mode Direct-Independent
Gate Peak Current (Max) +15 A
Gate Turn-off Voltage --8.5 V
Isolation Technology Galvanic
Interface Type Electrical
Protection Features Adv Active Clamping, Short Circuit, UVLO(Sec-side), UVLO(Pri-side)
Isolation Type Reinforced
Logic Input Voltage 5
Main/Peripheral N/A
Max Switching Frequency 50.0 kHz
Gate Turn-on Voltage +15.0 V
Supported Module Type IGBT, N-Channel MOSFET
Supported Topologies 2-level Voltage Source, 3-level NP-Clamped - Type 1, 3-level NP-Clamped - Type 2, Multi-Level NP-Clamped
Power - Output/Channel (Max) 1.4 W
Paralleling Support? No
Supply Voltage (Typ) 15 V
Time - Output Fall 12 ns
Time - Output Rise 6 ns
Technology SCALE-2+

產品詳情

Leveraging SCALE-2+ integrated circuit and isolated transformer technology for DC/DC power and switching signal transmission, the new 2SC0115T IGBT driver core improves system reliability and performance by eliminating the need for an opto-coupler. The IGBT driver core’s reinforced electrical isolation targets systems with a working voltage of 900 V, which is typical for 1200 V IGBT modules and complies with the PD2 and OV II requirements of IEC 60664-1 and IEC 61800-5-1. The 2SC0115T IGBT gate driver core supports modules up to 2400 A and switching frequencies of up to 50 kHz.

  • SCALE-2+ chip set
  • Available with Conformal Coating
  • Programmable SSD and AAC function
  • New Pin length for 2mm PCB's (2.54mm; 3.1mm; 5.84mm)
  • New pins for hand-, wave-and selective soldering processes
  • All lead free
  • All with EMC improved technology
  • 100% downward compatible
  • Dual-channel driver core for up to 1200 V
  • ±15A gate current, +15 V/-6 V
  • 1.2 W max. per channel
  • On-board regulated power supply
  • Soft Shut Down (SSD) or Advanced Active Clamping (AAC)
  • High reliability (reduced component count)First-class isolation technology
  • Partial-discharge-tested isolation technology
  • Delay time <100 ns, up to 50 kHz
  • Isolation coordination with working voltage 900V according to IEC 61800-5-1 and IEC 60664-1
  • -40°C to +105°C (105°C with derating)
  • RoHS compliant
  • No change in electrical and mechanical performance
  • UL Recognized Component